Characterization of sub-micron in-plane devices in H-terminated diamond

Physica Status Solidi (A) Applied Research

Volumn 193, Issue 3, 2002, Pages 517-522

  Garrido, J A ^a   Nebel, C E ^a   Stutzmann, M ^a   Rosel G ^a   Todt, R ^a   Amann, M C ^a   Snidero, E ^b   Bergonzo, P ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; HYDROGEN; OXIDATION; SURFACE PROPERTIES; TRANSISTORS;

SURFACE CONDUCTIVITY;

DIAMONDS;

EID: 0036809680     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200210)193:3<517::AID-PSSA517>3.0.CO;2-H     Document Type: Conference Paper

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