High-frequency performance of diamond field-effect transistor

IEEE Electron Device Letters

Volumn 22, Issue 8, 2001, Pages 390-392

  Taniuchi, Hirotada ^a,b   Umezawa, Hitoshi ^a,b   Arima, Takuya ^a,b   Tachiki, Minoru ^a,b   Kawarada, Hiroshi ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Diamond; fmaxfT; Hydrogen terminated surface; MESFET

Indexed keywords

DIAMOND FILMS; GATES (TRANSISTOR); HALL EFFECT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS; SUBSTRATES; TRANSCONDUCTANCE;

DIAMOND TRANSISTORS;

MESFET DEVICES;

EID: 0035424142     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.936353     Document Type: Article

References (12)

1. Power semiconductor device figure of merit for high-frequency applications
2. Growth and characterization of phosphorous doped 111 homoepitaxial diamond thin films
3. Pulse-doped diamond P-channel metal semiconductor field-effect transistor
4. Hydrogen effect of single-crystal diamond surface
5. Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements
6. High-performance diamond surface-channel field-effect transistors and their operation mechanism
7. Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds
8. Enhancement/depletion MESFET's of diamond and their logic circuits
9. Highly improved electrical properties of diamond metal-insulator-semiconductor field-effect-transistor prepared by ultrahigh vacuum process
10. High-performance diamond metal-semiconductor field-effect transistor with 1 μm gate length
11. Diamond surface-channel FET structure with 200 V breakdown voltage
12. Hydrogen-terminated diamond surfaces and interfaces