RF performance of diamond MISFETs

IEEE Electron Device Letters

Volumn 23, Issue 3, 2002, Pages 121-123

  Umezawa, Hitoshi ^a,b   Taniuchi, Hirotada ^a,b   Ishizaka, Hiroaki ^a,b   Arima, Takuya ^a,b   Fujihara, Naoki ^a,b   Tachiki, Minoru ^a,b   Kawarada, Hiroshi ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

CaF2; Cutoff frequency; Diamond; Gate source capacitance; Hydrogen terminated surface; Metal insulator semiconductor field effect transistor (MISFET)

Indexed keywords

CAPACITANCE; DIAMONDS; ELECTRIC INSULATORS; GATES (TRANSISTOR); MESFET DEVICES;

GATE-SOURCE CAPACITANCE;

MISFET DEVICES;

EID: 0036503272     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.988811     Document Type: Article

References (14)

1. Growth and characterization of phosphorous doped {1 1 1} homoepitaxial diamond thin films
2. Sulfur: A donor dopant for n-type diamond semiconductors
3. Hydrogenating effect of single-crystal diamond surface
4. Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements
5. High-performance diamond surface-channel field-effect transistors and their operation mechanism
6. Surface state density distribution of semiconducting diamond films measured from the Al/CaF2/i-diamond metal-insulator-semiconductor diodes and transistors
7. Hydrogen-terminated diamond surface and interfaces
8. Enhancement-mode metal-semiconductor field-effect transistors using homoepitaxial diamonds
9. High-performance diamond metal-semiconductor field-effect transistor with 1 mu m gate length
10. Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process
11. Enhancement/depletion MESFETs of diamond and their logic circuits
12. High-frequency performance of diamond field-effect transistor
13. DC and RF characteristics of 0.7 μm gate length diamond metal-insulator-semiconductor field-effect transistor