Etching characteristics of GaN by plasma chemical vaporization machining

Surface and Interface Analysis

Volumn 40, Issue 12, 2008, Pages 1566-1570

  Nakahama, Yasuji ^a,b   Kanetsuki, Norio ^a   Funaki, Takeshi ^a   Kadono, Masaru ^a   Sano, Yasuhisa ^b   Yamamura, Kazuya ^b   Endo, Katsuyoshi ^b   Mori, Yuzo ^b  

^a SHARP CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Atmospheric pressure plasma; Etching; Gallium nitride; Homoepitaxial; Plasma CVM; Subsurface damage

Indexed keywords

ACTIVATION ENERGY; ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; ATMOSPHERICS; CHEMICAL FINISHING; CHEMICAL REACTIONS; CLIMATOLOGY; COMMUNICATION CHANNELS (INFORMATION THEORY); EPITAXIAL GROWTH; ETCHING; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HELIUM; HIGH ENERGY PHYSICS; ION BOMBARDMENT; IONS; MACHINING; METEOROLOGY; NITRIDES; PLASMAS; RATE CONSTANTS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM; SUBSTRATES; VAPORIZATION;

ATMOSPHERIC PRESSURE PLASMA; BULK GAN; ENERGY IONS; ETCHING CHARACTERISTICS; HOMOEPITAXIAL; HOMOEPITAXIAL GROWTHS; PLASMA CHEMICAL VAPORIZATION MACHINING; REACTIVE IONS; REMOVAL RATES; SUBSURFACE DAMAGE; SUBSURFACE DAMAGES; SURFACE POLISHING;

GALLIUM ALLOYS;

EID: 56749178054     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2955     Document Type: Article

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