Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching

Applied Surface Science

Volumn 255, Issue 23, 2009, Pages 9469-9473

  Zhou, Shengjun ^a   Liu, Sheng ^a,b,c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

CMP; Dry etching; Mechanical grinding; Sapphire substrate

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON COMPOUNDS; CHEMICAL MECHANICAL POLISHING; CHEMICAL STABILITY; CHLORINE COMPOUNDS; FABRICATION; GRINDING (MACHINING); INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; PLASMA STABILITY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SILICA; SURFACE ROUGHNESS; THIN FILMS;

CHEMICAL MECHANICAL POLISHING(CMP); DRY ETCHING PROCESS; HIGH DENSITY PLASMAS; INDUCTIVELY COUPLED PLASMA (ICP); MECHANICAL GRINDING; SAPPHIRE SUBSTRATES; SCANNING ELECTRON MICROSCOPY IMAGE; THIN FILM LIGHT EMITTING DIODES;

DRY ETCHING;

EID: 69249212172     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.07.063     Document Type: Article

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