Preparation of freestanding GaN wafers by hydride vapor phase epitaxy with void-assisted separation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 1 A/B, 2003, Pages

  Oshima, Yuichi ^a   Eri, Takeshi ^a   Shibata, Masatomo ^a   Sunakawa, Haruo ^b,c   Kobayashi, Kenji ^b  

^a HITACHI CABLE LTD   (Japan)

^b NEC CORPORATION   (Japan)

^c FURUKAWA CO LTD   (Japan)

Author keywords

Etch pit; Freestanding GaN; HVPE; TEM; TiN; X ray diffraction

Indexed keywords

DENSITY (SPECIFIC GRAVITY); DENSITY MEASUREMENT (SPECIFIC GRAVITY); FILM PREPARATION; HYDRIDES; SILICON WAFERS; SURFACES; THIN FILMS; VAPOR PHASE EPITAXY; X RAY ANALYSIS;

FREESTANDING GALLIUM NITRIDE; FULL WIDTH AT HALF MAXIMUM; HYDRIDE VAPOR PHASE EPITAXY; MIRROR LIKE SURFACE; X RAY ROCKING CURVE PROFILE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037509966     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1     Document Type: Letter

References (18)

1. M. K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh and M. Stutzmann: Phys. Status Solidi (a) 159 (1997) R3.
2. S. Park, I.-W. Park and S. H. Choh: Jpn. J. Appl. Phys. 39 (2000) L1141.
3. K. Motoki, T. Okahisa, N. Matsumoto, M. Matsushima, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, T. Hirano, M. Nakayama, S. Nakahata, M. Ueno, D. Hara, Y. Kumagai, A. Koukitu and H. Seki: Jpn. J. Appl. Phys. 40 (2001) L140.
4. A. Wakahara, T. Yamamoto, K. Ishio, A. Yoshida, Y. Seki, K. Kainosho and O. Oda: Jpn. J. Appl. Phys. 39 (2000) 2399.
5. O. Kryliouk, M. Reed, T. Dann, T. Anderson and B. Chai: Mater. Sci. Eng. B 66 (1999) 26.
6. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: Appl. Phys. Lett. 48 (1986) 353.
7. S. Nakamura: Jpn. J. Appl. Phys. 30 (1991) L1705.
8. M. L. Gimpl, A. D. McMaster and N. Fuschillo: J. Appl. Phys. 35 (1964) 3572.
9. L. Bachmann, D. L. Sawner and B. M. Siegel: J. Appl. Phys. 36 (1965) 304.
10. W. M. Kane, J. P. Spratt and L. W. Hershinger: J. Appl. Phys. 37 (1966) 2085.
11. S. K. Sharma and J. Spitz: Thin Solid Films 65 (1980) 339.
12. V. G. Lifshits, I. G. Kaverina, V. V. Korobstov, A. A. Saranin and A. V. Zotov: Thin Solid Films 135 (1986) 99.
13. W. W. Mullins: J. Appl. Phys. 28 (1957) 333.
14. H. Miyake, M. Yamaguchi, M. Haino, A. Motogaito, K. Hiramatsu, S. Nambu, Y. Kawaguchi, N. Sawaki, Y. Iyechika, T. Maeda and I. Akasaki: MRS Internet J. Nitride Semicond. Res. 5S1 (2000) W2.3.
15. H. Miyake, S. Bohyama, M. Fukui, K. Hiramatsu, Y. Iyechika and T. Maeda: J. Cryst. Growth 237-239 (2002) 1055.
16. A. Usui, H. Sunakawa, K. Kobayashi, H. Watanabe and M. Mizuta: Mater. Res. Soc. Symp. Proc. 482 (2001) G5.6.1.
17. A. Sakai, H. Sunakawa and A. Usui: Appl. Phys. Lett. 71 (1997) 2259.
18. A. Usui, H. Sunakawa, N. Kuroda, A. Kimura, A. Sakai and A. A. Yamaguchi: Proc. 2nd Int. Symp. Blue Laser & Light Emitting Diodes, Chiba, Japan, 1998 (Ohm-sha, Ltd., Tokyo, 1998) pp. 17-21.