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Applied Physics Letters

Volumn 94, Issue 15, 2009, Pages

Photoelectrochemical etching of p -type GaN heterostructures

(5) Tamboli, Adele C a Hirai, Asako a Nakamura, Shuji a Denbaars, Steven P a Hu, Evelyn L a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; BAND-BENDING; DAMAGE-FREE; ELECTRON-HOLE PAIRS; ELEVATED TEMPERATURES; ETCH PARAMETERS; ETCHING REACTIONS; HETEROSTRUCTURES; N-TYPE LAYERS; P-N JUNCTIONS; P-TYPE GAN; P-TYPE SEMICONDUCTORS; PHOTO-ELECTROCHEMICAL ETCHINGS; SMALL BANDGAP; TUNABILITY;

CRYSTALS; ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL DEVICES; OPTICAL INSTRUMENTS; SEMICONDUCTING GALLIUM;

ETCHING;

EID: 65249146021 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3120545 Document Type: Article

Times cited : (26)

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