The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 375-378

  Li, Rui ^a   Dai, Tao ^a   Zhu, Ling ^a   Pan, Huapu ^a   Xu, Ke ^a   Zhang, Bei ^a   Yang, Zhijian ^a   Zhang, Guoyi ^a   Gan, Zizhao ^a   Hu, Xiaodong ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A1. Defects; A1. Etching; A1. Surfaces; A3. Superlattices; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

DEFECTS; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; STOICHIOMETRY; SUPERLATTICES; X RAY PHOTOELECTRON SPECTROSCOPY;

HALL MEASUREMENTS; OXYGEN-RELATED DEFECTS; SEMICONDUCTING III-V MATERIALS;

REACTIVE ION ETCHING;

EID: 33846415821     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.018     Document Type: Article

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