The influence of Pt redistribution on Ni1-xPtxSi growth properties

Journal of Applied Physics

Volumn 108, Issue 4, 2010, Pages

  Demeulemeester, J ^a   Smeets, D ^a   Comrie, C M ^b   Van Bockstael, C ^c   Knaepen, W ^c   Detavernier, C ^c   Temst, K ^a   Vantomme, A ^a  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF CAPE TOWN   (South Africa)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; GROWTH PROPERTIES; HIGH MOBILITY; IN-SITU; INITIAL STAGES; NI CONTENT; NI SILICIDE; PHASE FORMATIONS; PHASE SEQUENCE; PT ALLOY; REAL-TIME X-RAY DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROMETRY; SILICIDE PHASE; SOLID PHASE REACTION;

GROWTH KINETICS; NICKEL COMPOUNDS; PHASE INTERFACES; PLATINUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICIDES; SILICON; SILICON ALLOYS; X RAY DIFFRACTION;

PLATINUM ALLOYS;

EID: 77956329726     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3455873     Document Type: Conference Paper

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