SCOPUS 정보 검색 플랫폼

Volumn 93, Issue 26, 2008, Pages

Pt redistribution during Ni(Pt) silicide formation

(8) Demeulemeester, J a Smeets, D a Van Bockstael, C b Detavernier, C b Comrie, C M c Barradas, N P d,e Vieira, A f Vantomme, A a

a KU LEUVEN (Belgium)

b GHENT UNIVERSITY (Belgium)

c UNIVERSITY OF CAPE TOWN (South Africa)

d INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

e CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

f INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GRAIN BOUNDARIES; GRAIN GROWTH; GROWTH KINETICS; NICKEL; NICKEL COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON;

CRYSTALLOGRAPHIC ORIENTATIONS; NI SILICIDES; PHASE REACTIONS; RUTHERFORD BACKSCATTERINGS; SI FILMS; SILICIDE FORMATIONS;

PLATINUM;

EID: 58149216198 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3058719 Document Type: Article

Times cited : (52)

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