Impact of surface preparation on nickel-platinum alloy silicide phase formation

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2523-2527

  Imbert, B ^a,b   Guichet, C ^b   Bonnetier, S ^c   Zoll, S ^d   Juhel, M ^c   Hopstaken, M ^a   Clifton, P ^e   Thomas, O ^b  

^a NXP SEMICONDUCTORS   (France)

^b AIX MARSEILLE UNIVERSITY   (France)

^c STMICROELECTRONICS   (France)

^d Freescale Semiconductors   (France)

^e Imago Scientific Instruments   (United States)

Author keywords

Atom probe tomography; Ni3Si2; Nickel; Platinum; Silicide; Surface preparation

Indexed keywords

CRYSTALLOGRAPHY; ETCHING; PLATINUM ALLOYS; SILICON COMPOUNDS; SPUTTER DEPOSITION; THIN FILMS; WAFER BONDING;

ATOM PROBE TOMOGRAPHY; GRAIN ORIENTATION; NI3SI2; SILICIDE; SURFACE PREPARATION;

NICKEL ALLOYS;

EID: 34648844156     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.030     Document Type: Article

References (11)

1. Lavoie C., d'Heurle F., Detavernier C., and Cabral C. Microelectron. Eng. 70 (2003) 144
2. Mangelinck D., Dai J.Y., Lahiri S.K., Ho C.S., and Osipowicz T. Adv. Interconnects Contacts. Symp. (1999) 163-168
3. Rivero C., Gergaud P., Gailhanou M., Thomas O., Froment B., Jaouen H., and Carron V. Appl. Phys. Lett. 87 (2005) 041904
4. Wilson D.F., and Cavin O.B. Scripta Metall. Mater. 26 (1992) 85
5. Detavernier C., Lavoie C., and d'Heurle F. J. Appl. Phys. 93 (2003) 2510
6. Thompson K., Nunton J.H., Kelly T.F., and Larson D.J. J. Vac. Sci. Technol. B 24 1 (2006)
7. Hoummada K., Cadel E., Mangelinck D., Perrin-Pellegrino C., Bavette D., and Deconihout B. Appl. Phys. Lett. 89 (2006) 181905
8. d'Heurle, et al. J. Appl. Phys. 55 12 (1984)
9. Gas P., d'Heurle F.M., LeGoues F.K., and La Placa S.J. J. Appl. Phys. 59 (1986) 10
10. Tsuchiaki M., Ohuchi K., and Hongo C. JJAP vol. 43 8A (2004) 5133-5173
11. S. Bonnetier et al., Microelectr. Eng. 2007, doi:10.1016/j.mee.2007.05.02.