SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 21, 2010, Pages

Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application

(9) Zhang, Jiayong a Wang, Xiaofeng a Wang, Xiaodong a Ma, Huili a Cheng, Kaifang a Fan, Zhongchao a Li, Yan a Ji, An a Yang, Fuhua a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL LITHOGRAPHY; DC POWER CONSUMPTION; DEVICE FABRICATIONS; ELECTRICAL CHARACTERIZATION; GAP WIDTHS; NANOGAP ELECTRODES; PHASE-CHANGE RANDOM ACCESS MEMORY;

DC POWER TRANSMISSION; FABRICATION; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE;

LITHOGRAPHY;

EID: 77956247578 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3431297 Document Type: Article

Times cited : (11)

References (27)

1
- 36049053305
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.21.1450
- S. R. Ovshinsky, Phys. Rev. Lett. PRLTAO 0031-9007 21, 1450 (1968). 10.1103/PhysRevLett.21.1450
- (1968) Phys. Rev. Lett. , vol.21 , pp. 1450
- Ovshinsky, S.R.¹

2
- 0842309810
- TDIMD5 0163-1918.
- S. Lai, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 255.
- Tech. Dig.-Int. Electron Devices Meet. , vol.2003 , pp. 255
- Lai, S.¹

3
- 69549126428
- APPLAB 0003-6951,. 10.1063/1.3210792
- D. Krebs, S. Raoux, C. T. Rettner, G. W. Burr, M. Salinga, and M. Wuttig, Appl. Phys. Lett. APPLAB 0003-6951 95, 082101 (2009). 10.1063/1.3210792
- (2009) Appl. Phys. Lett. , vol.95 , pp. 082101
- Krebs, D.¹ Raoux, S.² Rettner, C.T.³ Burr, G.W.⁴ Salinga, M.⁵ Wuttig, M.⁶

4
- 33846204286
- 5 nanoparticles for phase-change memory applications
- DOI 10.1063/1.2430481
- D.-S. Suh, E. Lee, K. H. P. Kim, J.-S. Noh, W.-C. Shin, Y.-S. Kang, C. Kim, and Y. Khang, Appl. Phys. Lett. APPLAB 0003-6951 90, 023101 (2007). 10.1063/1.2430481 (Pubitemid 46105596)
- (2007) Applied Physics Letters , vol.90 , Issue.2 , pp. 023101
- Suh, D.-S.¹ Lee, E.² Kim, K.H.P.³ Noh, J.-S.⁴ Shin, W.-C.⁵ Kang, Y.-S.⁶ Kim, C.⁷ Khang, Y.⁸ Yoon, H.R.⁹ Jo, W.¹⁰

5
- 16244410161
- Low-cost and nanoscale non-volatile memory concept for future silicon chips
- DOI 10.1038/nmat1350
- M. H. R. Lankhorst, B. W. S. M. M. Ketelaars, and R. A. M. Wolters, Nat. Mater. 4, 347 (2005). 10.1038/nmat1350 1476-1122 (Pubitemid 40450216)
- (2005) Nature Materials , vol.4 , Issue.4 , pp. 347-352
- Lankhorst, M.H.R.¹ Ketelaars, B.W.S.M.M.² Wolters, R.A.M.³

6
- 34547767049
- EDLEDZ 0741-3106.
- S. B. Kim and H.-S. Philip Wong, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 697 (2007).
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 697
- Kim, S.B.¹ Philip Wong, H.-S.²

7
- 34547594195
- PRBMDO 0163-1829,. 10.1103/PhysRevB.76.054101
- C. Lang, S. A. Song, D. N. Manh, and D. J. H. Cockayne, Phys. Rev. B PRBMDO 0163-1829 76, 054101 (2007). 10.1103/PhysRevB.76.054101
- (2007) Phys. Rev. B , vol.76 , pp. 054101
- Lang, C.¹ Song, S.A.² Manh, D.N.³ Cockayne, D.J.H.⁴

8
- 68949085197
- SSTEET 0268-1242,. 10.1088/0268-1242/24/7/075016
- B.-J. Bae, S.-H. Hong, S.-Y. Hwang, J.-Y. Hwang, K.-Y. Yang, and H. Lee, Semicond. Sci. Technol. SSTEET 0268-1242 24, 075016 (2009). 10.1088/0268-1242/ 24/7/075016
- (2009) Semicond. Sci. Technol. , vol.24 , pp. 075016
- Bae, B.-J.¹ Hong, S.-H.² Hwang, S.-Y.³ Hwang, J.-Y.⁴ Yang, K.-Y.⁵ Lee, H.⁶

9
- 33746278835
- A novel lateral phase-change random access memory characterized by ultra low RESET current and power consumption
- DOI 10.1143/JJAP.45.L726
- Y. Yin, A. Miyachi, D. Niida, H. Sone, and S. Hosaka, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 45, L726 (2006). 10.1143/JJAP.45.L726 (Pubitemid 44106955)
- (2006) Japanese Journal of Applied Physics, Part 2: Letters , vol.45 , Issue.24-28
- Yin, Y.¹ Miyachi, A.² Niida, D.³ Sone, H.⁴ Hosaka, S.⁵

10
- 33751103904
- Lateral phase change random access memory cell design for low power operation
- DOI 10.1007/s00542-006-0141-z, 4th European Workshop on Innovative Mass Storage Technology, Aachen, Germany, on 28-29 September 2004
- F. Merget, D. H. Kim, P. H. Bolivar, and H. Kurz, Microsyst. Technol. MCTCEF 0946-7076 13, 169 (2007). 10.1007/s00542-006-0141-z (Pubitemid 44770908)
- (2007) Microsystem Technologies , vol.13 , Issue.2 , pp. 169-172
- Merget, F.¹ Kim, D.H.² Bolivar, P.H.³ Kurz, H.⁴

11
- 36148973551
- Lateral SbTeN based multi-layer phase change memory for multi-state storage
- DOI 10.1016/j.mee.2007.03.004, PII S0167931707003401
- Y. Yin, H. Sone, and S. Hosaka, Microelectron. Eng. MIENEF 0167-9317 84, 2901 (2007). 10.1016/j.mee.2007.03.004 (Pubitemid 350116283)
- (2007) Microelectronic Engineering , vol.84 , Issue.12 , pp. 2901-2906
- Yin, Y.¹ Sone, H.² Hosaka, S.³

12
- 48649090655
- EDLEDZ 0741-3106.
- Y. Yin, K. Ota, N. Higano, H. Sone, and S. Hosaka, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 876 (2008).
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 876
- Yin, Y.¹ Ota, K.² Higano, N.³ Sone, H.⁴ Hosaka, S.⁵

13
- 65949095010
- APPLAB 0003-6951,. 10.1063/1.3139776
- H. Yang, C. T. Chong, R. Zhao, H. K. Lee, J. Li, K. G. Lim, and L. Shi, Appl. Phys. Lett. APPLAB 0003-6951 94, 203110 (2009). 10.1063/1.3139776
- (2009) Appl. Phys. Lett. , vol.94 , pp. 203110
- Yang, H.¹ Chong, C.T.² Zhao, R.³ Lee, H.K.⁴ Li, J.⁵ Lim, K.G.⁶ Shi, L.⁷

14
- 50249124564
- (IEEE, New York)
- D. T. Castro, L. Goux, G. A. M. Hurkx, K. Attenborough, R. Delhougne, J. Lisoni, F. J. Jedema, M. A. A. t Zandt, R. A. M. Wolters, D. J. Gravesteijn, M. Verheijen, M. Kaiser, R. G. R. Weemaes, and D. J. wouters, Proceedings of the IEEE Electron Devices Meeting (IEEE, New York, 2007), pp. 315-318.
- (2007) Proceedings of the IEEE Electron Devices Meeting , pp. 315-318
- Castro, D.T.¹ Goux, L.² Hurkx, G.A.M.³ Attenborough, K.⁴ Delhougne, R.⁵ Lisoni, J.⁶ Jedema, F.J.⁷ Zandt M A A, T.⁸ Wolters, R.A.M.⁹ Gravesteijn, D.J.¹⁰ Verheijen, M.¹¹ Kaiser, M.¹² Weemaes, R.G.R.¹³ Wouters, D.J.¹⁴

15
- 67049132722
- APPLAB 0003-6951,. 10.1063/1.3127223
- C. Kim, D. Kang, T.-Y. Lee, K. H. P. Kim, Y.-S. Kang, J. Lee, S.-W. Nam, K.-B. Kim, and Y. Khang, Appl. Phys. Lett. APPLAB 0003-6951 94, 193504 (2009). 10.1063/1.3127223
- (2009) Appl. Phys. Lett. , vol.94 , pp. 193504
- Kim, C.¹ Kang, D.² Lee, T.-Y.³ Kim, K.H.P.⁴ Kang, Y.-S.⁵ Lee, J.⁶ Nam, S.-W.⁷ Kim, K.-B.⁸ Khang, Y.⁹

16
- 61649092340
- NALEFD 1530-6984,. 10.1021/nl802808f
- S. Meister, D. T. Schoen, M. A. Topinka, A. M. Minor, and Y. Cui, Nano Lett. NALEFD 1530-6984 8, 4562 (2008). 10.1021/nl802808f
- (2008) Nano Lett. , vol.8 , pp. 4562
- Meister, S.¹ Schoen, D.T.² Topinka, M.A.³ Minor, A.M.⁴ Cui, Y.⁵

17
- 1042267549
- JAPIAU 0021-8979,. 10.1063/1.362548
- N. Ohshima, J. Appl. Phys. JAPIAU 0021-8979 79, 8357 (1996). 10.1063/1.362548
- (1996) J. Appl. Phys. , vol.79 , pp. 8357
- Ohshima, N.¹

18
- 67349182866
- EDLEDZ 0741-3106.
- S.-M. Yoon, S.-W. Jung, S.-Y. Lee, Y.-S. Park, and B.-G. Yu, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 371 (2009).
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 371
- Yoon, S.-M.¹ Jung, S.-W.² Lee, S.-Y.³ Park, Y.-S.⁴ Yu, B.-G.⁵

19
- 76749089021
- NALEFD 1530-6984,. 10.1021/nl902777z
- R. E. Simpson, M. Krbal, P. Fons, A. V. Kolobov, J. Tominaga, T. Uruga, and H. Tanida, Nano Lett. NALEFD 1530-6984 10, 414 (2010). 10.1021/nl902777z
- (2010) Nano Lett. , vol.10 , pp. 414
- Simpson, R.E.¹ Krbal, M.² Fons, P.³ Kolobov, A.V.⁴ Tominaga, J.⁵ Uruga, T.⁶ Tanida, H.⁷

20
- 70350680819
- SSTEET 0268-1242,. 10.1088/0268-1242/24/10/105025
- S.-H. Hong, B.-J. Bae, H. Lee, M.-C. Jung, and H.-J. Shin, Semicond. Sci. Technol. SSTEET 0268-1242 24, 105025 (2009). 10.1088/0268-1242/24/10/105025
- (2009) Semicond. Sci. Technol. , vol.24 , pp. 105025
- Hong, S.-H.¹ Bae, B.-J.² Lee, H.³ Jung, M.-C.⁴ Shin, H.-J.⁵

21
- 77449093103
- NNOTER 0957-4484,. 10.1088/0957-4484/21/2/025703
- S.-H. Hong, B.-J. Bae, and H. Lee, Nanotechnology NNOTER 0957-4484 21, 025703 (2010). 10.1088/0957-4484/21/2/025703
- (2010) Nanotechnology , vol.21 , pp. 025703
- Hong, S.-H.¹ Bae, B.-J.² Lee, H.³

22
- 56649097353
- MIENEF 0167-9317,. 10.1016/j.mee.2008.09.023
- S.-M. Yoon, S.-W. Jung, S.-Y. Lee, Y.-S. Park, and B.-G. Yu, Microelectron. Eng. MIENEF 0167-9317 85, 2334 (2008). 10.1016/j.mee.2008.09.023
- (2008) Microelectron. Eng. , vol.85 , pp. 2334
- Yoon, S.-M.¹ Jung, S.-W.² Lee, S.-Y.³ Park, Y.-S.⁴ Yu, B.-G.⁵

23
- 33646937687
- Fabrication of planar nano-gap electrodes for single molecule evaluation
- DOI 10.1143/JJAP.45.3766
- M. Nakata, T. Edura, K. Tsutsui, M. Tokuda, H. Onozato, T. Kaneko, K. Nagatsuma, M. Morita, K. Itaka, H. Koinuma, and Y. Wada, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 45, 3766 (2006). 10.1143/JJAP.45.3766 (Pubitemid 43794289)
- (2006) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.45 , pp. 3766-3767
- Nakata, M.¹ Edura, T.² Tsutsui, K.³ Tokuda, M.⁴ Onozato, H.⁵ Kaneko, T.⁶ Nagatsuma, K.⁷ Morita, M.⁸ Itaka, K.⁹ Koinuma, H.¹⁰ Wada, Y.¹¹

24
- 0042026839
- THSFAP 0040-6090,. 10.1016/S0040-6090(03)00772-7
- T. Nagase, T. Kubota, and S. Mashiko, Thin Solid Films THSFAP 0040-6090 438-439, 374 (2003). 10.1016/S0040-6090(03)00772-7
- (2003) Thin Solid Films , vol.438-439 , pp. 374
- Nagase, T.¹ Kubota, T.² Mashiko, S.³

25
- 33750430269
- 2-assisted focused ion beam
- DOI 10.1063/1.2364833
- G. C. Gazzadi, E. Angeli, P. Facci, and S. Frabboni, Appl. Phys. Lett. APPLAB 0003-6951 89, 173112 (2006). 10.1063/1.2364833 (Pubitemid 44656714)
- (2006) Applied Physics Letters , vol.89 , Issue.17 , pp. 173112
- Gazzadi, G.C.¹ Angeli, E.² Facci, P.³ Frabboni, S.⁴

26
- 31544438557
- Direct fabrication of nano-gap electrodes by focused ion beam etching
- DOI 10.1016/j.tsf.2005.07.031, PII S004060900500831X, Proceedings of the Sixth International Conference on Nano-Molecular Electronics (ICNME 2004)
- T. Nagase, K. Gamo, T. Kubota, and S. Mashiko, Thin Solid Films THSFAP 0040-6090 499, 279 (2006). 10.1016/j.tsf.2005.07.031 (Pubitemid 43165580)
- (2006) Thin Solid Films , vol.499 , Issue.1-2 , pp. 279-284
- Nagase, T.¹ Gamo, K.² Kubota, T.³ Mashiko, S.⁴

27
- 77956241275
- NNOTER 0957-4484,. 10.1088/0957-4484/21/7/075303
- J. Y. Zhang, X. F. Wang, X. D. Wang, Z. C. Fan, Y. Li, A. Ji, and F. H. Yang, Nanotechnology NNOTER 0957-4484 21, 075303 (2010). 10.1088/0957-4484/21/7/ 075303
- (2010) Nanotechnology , vol.21 , pp. 075303
- Zhang, J.Y.¹ Wang, X.F.² Wang, X.D.³ Fan, Z.C.⁴ Li, Y.⁵ Ji, A.⁶ Yang, F.H.⁷

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