메뉴 건너뛰기




Volumn 30, Issue 4, 2009, Pages 371-373

Phase-change-driven programmable switch for nonvolatile logic applications

Author keywords

Logic; Nonvolatile; Phase change memory (PCM); Programmable; Switch

Indexed keywords

LOGIC; LOGIC APPLICATIONS; NEW DEVICES; NONVOLATILE; OPERATING CHANNELS; OPERATIONAL BEHAVIORS; PHASE CHANGES; PHASE-CHANGE MEMORY (PCM); PROGRAMMABLE; PROGRAMMABLE SWITCHES;

EID: 67349182866     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2013879     Document Type: Article
Times cited : (16)

References (15)
  • 1
    • 0031677389 scopus 로고    scopus 로고
    • Multiple-valued logic-in-memory VLSI based on a floating-gate-MOS pass transistor network
    • T. Hanyu, K. Teranishi, and M. Kameyama, "Multiple-valued logic-in-memory VLSI based on a floating-gate-MOS pass transistor network," in Proc. Int. Solid-State Circuits Conf., 1998, pp. 194-195.
    • (1998) Proc. Int. Solid-State Circuits Conf , pp. 194-195
    • Hanyu, T.1    Teranishi, K.2    Kameyama, M.3
  • 7
    • 33748997398 scopus 로고    scopus 로고
    • A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte
    • Sep
    • M. N. Kozicki, C. Gopalan, M. Balakrishnan, and M. Mitkova, "A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte," IEEE Trans. Nanotechnol., vol. 5, no. 5, pp. 535-544, Sep. 2006.
    • (2006) IEEE Trans. Nanotechnol , vol.5 , Issue.5 , pp. 535-544
    • Kozicki, M.N.1    Gopalan, C.2    Balakrishnan, M.3    Mitkova, M.4
  • 11
    • 56649097353 scopus 로고    scopus 로고
    • Fabrication and electrical characterization of phase-change memory devices with nanoscale self-heating-channel structures
    • Dec
    • S. M. Yoon, S. W. Jung, S. Y. Lee, Y. S. Park, and B. G. Yu, "Fabrication and electrical characterization of phase-change memory devices with nanoscale self-heating-channel structures," Microelectron. Eng., vol. 85, no. 12, pp. 2334-2337, Dec. 2008.
    • (2008) Microelectron. Eng , vol.85 , Issue.12 , pp. 2334-2337
    • Yoon, S.M.1    Jung, S.W.2    Lee, S.Y.3    Park, Y.S.4    Yu, B.G.5
  • 12
    • 35948962357 scopus 로고    scopus 로고
    • Electrical characterization of nonvolatile phase-change memory devices using Sb-Rich Ge-Sb-Te alloy films
    • S. M. Yoon, K. J. Choi, N. Y. Lee, S. Y. Lee, Y. S. Park, and B. G. Yu, "Electrical characterization of nonvolatile phase-change memory devices using Sb-Rich Ge-Sb-Te alloy films," Jpn. J. Appl. Phys., vol. 46, no. 11, pp. 7225-7231, 2007.
    • (2007) Jpn. J. Appl. Phys , vol.46 , Issue.11 , pp. 7225-7231
    • Yoon, S.M.1    Choi, K.J.2    Lee, N.Y.3    Lee, S.Y.4    Park, Y.S.5    Yu, B.G.6
  • 14
    • 34547538011 scopus 로고    scopus 로고
    • 5 thin films into nanosized patterns using TiN hard mask, Jpn. J. Appl. Phys., 45, no. 37-41, pp. L1 080-L1 083, 2006.
    • 5 thin films into nanosized patterns using TiN hard mask," Jpn. J. Appl. Phys., vol. 45, no. 37-41, pp. L1 080-L1 083, 2006.
  • 15
    • 43049105346 scopus 로고    scopus 로고
    • Evidence of field induced nucleation in phase change memory
    • Apr
    • I. V. Karpov, M. Mitra, D. Kau, G. Spadini, Y. A. Kryukov, and V. G. Karpov, "Evidence of field induced nucleation in phase change memory," Appl. Phys. Lett., vol. 92, no. 17, p. 173 501, Apr. 2008.
    • (2008) Appl. Phys. Lett , vol.92 , Issue.17 , pp. 173-501
    • Karpov, I.V.1    Mitra, M.2    Kau, D.3    Spadini, G.4    Kryukov, Y.A.5    Karpov, V.G.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.