A novel lateral phase-change random access memory characterized by ultra low RESET current and power consumption

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 24-28, 2006, Pages

  Yin, You ^a   Miyachi, Akihira ^a   Niida, Daisuke ^a   Sone, Hayato ^a   Hosaka, Sumio ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

Chalcogenide; Lateral PRAM; Phase change; Ultra low power consumption; Ultra low RESET current

Indexed keywords

ELECTRIC CURRENTS; ELECTRODES; HEATING;

CHALCOGENIDE; LATERAL PRAM; PHASE CHANGE; SWITCHING POWER; ULTRA LOW POWER CONSUMPTION; ULTRA LOW RESET CURRENT;

RANDOM ACCESS STORAGE;

EID: 33746278835     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L726     Document Type: Article

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