Selective and lithography-independent fabrication of 20nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

Nanotechnology

Volumn 21, Issue 7, 2010, Pages

  Zhang, J Y ^a   Wang, X F ^a   Wang, X D ^a   Fan, Z C ^a   Li, Y ^a   Ji, An ^a   Yang, F H ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL LITHOGRAPHY; GOOD COMPATIBILITY; HIGH THROUGHPUT; LOW COSTS; NANO CHANNELS; NANOGAP ELECTRODES; SEMICONDUCTOR TECHNOLOGY; WAFER SCALE FABRICATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

ELECTRODES;

EID: 77956241275     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/7/075303     Document Type: Article

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