Toward the ultimate limit of phase change in Ge2Sb 2Te5

Nano Letters

Volumn 10, Issue 2, 2010, Pages 414-419

  Simpson, R E ^a   Krbal, M ^a   Fons, P ^a,b   Kolobov, A V ^a,b   Tominaga, J ^a   Uruga, T ^b   Tanida, H ^b  

^a National Institute of Applied Industrial Science and Technology   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

Ge2sb2te5; PCRAM; Phase change memory; Scaling; Stress

Indexed keywords

BULK CRYSTALLIZATION; CRYSTALLIZATION TEMPERATURE; GE2SB2TE5; MEMORY CELL; PCRAM; PHASE CHANGE;

CRYSTALLIZATION; GERMANIUM; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 76749089021     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl902777z     Document Type: Article

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