Lateral SbTeN based multi-layer phase change memory for multi-state storage

Microelectronic Engineering

Volumn 84, Issue 12, 2007, Pages 2901-2906

  Yin, You ^a   Sone, Hayato ^a   Hosaka, Sumio ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

Lateral; Multi layer; Multi state; N doped; Phase change memory; Sb2Te3

Indexed keywords

ANTIMONY COMPOUNDS; DOPING (ADDITIVES); ELECTRONIC STATES; MULTILAYERS; X RAY DIFFRACTION ANALYSIS;

MULTI-STATE STORAGE; STATIC SWITCHING PROPERTIES;

PHASE CHANGE MEMORY;

EID: 36148973551     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.03.004     Document Type: Article

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