SCOPUS 정보 검색 플랫폼

Volumn 85, Issue 12, 2008, Pages 2334-2337

Fabrication and electrical characterization of phase-change memory devices with nanoscale self-heating-channel structures

(5) Yoon, Sung Min a Jung, Soon Won a Lee, Seung Yun a Park, Young Sam a Yu, Byoung Gon a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

Ge Sb Te (GST); Nonvolatile memory; Phase change; Self heating

Indexed keywords

DATA STORAGE EQUIPMENT; GERMANIUM; HEATING; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PLASMA ETCHING; TELLURIUM COMPOUNDS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

AGGRESSIVE SCALING; CHANNEL STRUCTURES; DRY ETCHING TECHNIQUES; ELECTRICAL CHARACTERIZATIONS; GE-SB-TE (GST); HARD MASKS; MATERIAL COMPOSITIONS; MEMORY PERFORMANCES; NANOMETER SIZES; NANOSCALE; NONVOLATILE MEMORY; NONVOLATILE-MEMORY APPLICATIONS; PATTERNING PROCESSES; PHASE-CHANGE; POWER OPERATIONS; SCALING REGIMES; SELF-HEATING; SWITCHING SPEEDS;

PHASE CHANGE MEMORY;

EID: 56649097353 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2008.09.023 Document Type: Article

Times cited : (11)

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