Spectromicroscopic investigation of lateral-type Ge2Sb 2Te5 device failure

Semiconductor Science and Technology

Volumn 24, Issue 10, 2009, Pages

  Hong, Sung Hoon ^a   Bae, Byeong Ju ^a   Lee, Heon ^a   Jung, Min Cherl ^b   Shin, Hyun Joon ^c  

^a Korea University   (South Korea)

^b University of Ulsan   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE FAILURES; GE ATOM; OUT-DIFFUSION; OXYGEN IMPURITY; SCANNING PHOTOELECTRON MICROSCOPY;

ATOMS; GERMANIUM; OXYGEN; PHASE CHANGE MEMORY; PHASE TRANSITIONS; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SURFACE DIFFUSION; SYSTEM THEORY; TELLURIUM COMPOUNDS; TRANSIENTS;

ATOMIC SPECTROSCOPY;

EID: 70350680819     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/10/105025     Document Type: Article

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