Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 672-676

  Aberg D ^a   Hallen A ^a   Svensson, B G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; HELIUM; ION IMPLANTATION; NITROGEN; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SILICON CARBIDE; VOLTAGE MEASUREMENT;

DEEP ACCEPTORS; IMPLANTATION-RELATED DEFECTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033350955     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00601-8     Document Type: Article

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