Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n -type 4H-SiC

Applied Physics Letters

Volumn 92, Issue 14, 2008, Pages

  Wong Leung, J ^a   Svensson, B G ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ION IMPLANTATION; SILICON CARBIDE;

DEEP-LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELD ASSISTED ANNEALING; POSTIMPLANT ANNEALING;

EPITAXIAL LAYERS;

EID: 42149122078     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2907693     Document Type: Article

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