Deep level transient spectroscopy study of defects in hydrogen implanted p -type 4H-SiC

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Alfieri, Giovanni ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL LAYERS; HYDROGEN; ION IMPLANTATION; VALENCE BANDS;

HYDROGEN IMPLANTATION; IMPLANTATION TEMPERATURE; ISOCHRONAL ANNEALING; REACTIVATION;

SILICON CARBIDE;

EID: 34249898898     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2737630     Document Type: Article

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