AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study

Solid-State Electronics

Volumn 54, Issue 11, 2010, Pages 1367-1371

  Hayashi, Y ^a   Sugiura, S ^a   Kishimoto, S ^a   Mizutani, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Device simulation; GaN; HfO2; Interface trap; MOSFET

Indexed keywords

DEVICE SIMULATIONS; GAN; HFO2; INTERFACE TRAPS; MOS-FET;

GALLIUM ALLOYS; GALLIUM NITRIDE; MOS DEVICES; MOSFET DEVICES; THRESHOLD VOLTAGE;

HAFNIUM COMPOUNDS;

EID: 77955656526     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.03.022     Document Type: Article

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