Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO 2 as gate oxide

Electronics Letters

Volumn 43, Issue 17, 2007, Pages 952-953

  Sugiura, S ^a   Kishimoto, S ^a   Mizutani, T ^a   Kuroda, M ^b   Ueda, T ^b   Tanaka, T ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; GATE DIELECTRICS; TRANSCONDUCTANCE;

ENHANCEMENT-MODE N-CHANNEL; GATE OXIDE; P-GAN;

MOSFET DEVICES;

EID: 34548020948     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20071814     Document Type: Article

References (6)

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2. Matocha, K., Gutmann, R.J., and Chow, T.P.: ' Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors ', IEEE Trans. Electron Devices, 2003, 50, (5), p. 1200-1204 10.1109/TED.2003.813456 0018-9383
3. Irokawa, Y., Nakano, Y., Ishiko, M., Kachi, T., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Pan, C.-C., Chen, G.-T., and Chyi, J.-I.: ' MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors ', Appl. Phys. Lett., 2004, 84, (15), p. 2919-2921 10.1063/1.1704876 0003-6951
4. Huang, W., Khan, T., and Chow, T.P.: ' Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substrates ', IEEE Electron Device Lett., 2006, 27, (10), p. 796-798 10.1109/LED.2006.883054 0741-3106
5. 2 gate insulator ', Phys. Status Solidi, 2007, in press
6. Matocha, K., Chow, T.P., and Gutmann, R.J.: ' High-voltage normally off GaN MOSFETs on sapphire substrates ', IEEE Trans. Electron Devices, 2005, 52, (1), p. 6-10 10.1109/TED.2004.841355 0018-9383