Quasi-normally-off AlGaN/GaN HEMTs fabricated by fluoride-based plasma treatment

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2732-2735

  Mizuno, Hiroaki ^a   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BARRIER LAYER; FLUORIDE-BASED PLASMA TREATMENT; FLUORINE ATOMS; N-ALGAN; NITRIDE SEMICONDUCTORS; PLASMA TREATMENTS; THERMAL STABILITY;

CRYSTALS; ELECTRIC CONDUCTIVITY; FLUORINE; GALLIUM NITRIDE; NITRIDES; OPTICAL DESIGN; PLASMA APPLICATIONS; PLASMA STABILITY; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS;

ACTIVATION ENERGY;

EID: 34447281224     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674859     Document Type: Conference Paper

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