Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator

Solid-State Electronics

Volumn 54, Issue 1, 2010, Pages 79-83

  Sugiura, S ^a   Hayashi, Y ^a   Kishimoto, S ^a   Mizutani, T ^a   Kuroda, M ^b   Ueda, T ^b   Tanaka, T ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

AlGaN GaN; HfO2; MOSFET; Normally off

Indexed keywords

ALGAN/GAN; GATE INSULATOR; GATE OXIDE; HETERO INTERFACES; HIGH QUALITY; HIGH-K HFO; III-NITRIDE; MAXIMUM TRANSCONDUCTANCE; METAL-OXIDE; MOS-FET; MOSFETS; OFF MODE;

DRAIN CURRENT; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 71549114508     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.10.007     Document Type: Article

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