A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

IEEE Electron Device Letters

Volumn 27, Issue 2, 2006, Pages 81-83

  Lee, Heon Bok ^a   Cho, Hyun Ick ^a   An, Hyun Su ^a   Bae, Young Ho ^b   Lee, Myoung Bok ^c   Lee, Jung Hee ^a   Hahm, Sung Ho ^a  

^a Kyungpook National University   (South Korea)

^b Uiduk University   (South Korea)

^c Nano Practical Application Center   (South Korea)

Author keywords

GaN; MOSFET; Schottky barrier (SB)

Indexed keywords

DEPOSITION; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSCONDUCTANCE;

SCHOTTKY BARRIER (SB); SILICON SUBSTRATE;

MOSFET DEVICES;

EID: 31544442977     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.862675     Document Type: Article

References (9)

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