The nanoaquarium: A platform for in situ transmission electron microscopy in liquid media

Journal of Microelectromechanical Systems

Volumn 19, Issue 4, 2010, Pages 885-894

  Grogan, Joseph M ^a   Bau, Haim H ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

Electron microscopy; fluidics; in situ; nanotechnology; wafer bonding

Indexed keywords

BIOLOGICAL INTERACTIONS; BULK DEVICES; COLLOIDAL CRYSTALS; DEVICE PERFORMANCE; ELECTROCHEMICAL DEPOSITION; FABRICATION PROCESS; FLOW CELLS; HIGH-VACUUM ENVIRONMENTS; IMAGE PROCESS; IN-SITU; IN-SITU TRANSMISSION; INTEGRATED ELECTRODES; LIQUID LAYER; LIQUID MEDIA; LIQUID SAMPLE; NANO SCALE; NANOWIRE GROWTH; POLYSTYRENE NANOPARTICLES; POTENTIAL APPLICATIONS; REALTIME IMAGING; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SEALED VESSELS; SILICON NITRIDE MEMBRANE; TEM/STEM; TRANSMISSION ELECTRON MICROSCOPE; WAFER-SCALE PROCESSING;

AGGLOMERATION; BONDING; ELECTRODES; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPES; ELECTRONS; FLUIDICS; GOLD DEPOSITS; IMAGE PROCESSING; LIQUIDS; NANOPARTICLES; NANOTECHNOLOGY; POLYSTYRENES; REDUCTION; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING;

IN SITU PROCESSING;

EID: 77955358458     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2010.2051321     Document Type: Article

References (38)

1. M. L. Walker, S. A. Burgess, J. R. Sellers, F. Wang, J. A. Hammer, J. Trinick, and P. J. Knight, "Two-headed binding of a processive myosin to F-actin," Nature, vol.405, no.6788, pp. 804-807, Jun. 2000.
2. Y. A. Cengel and M. A. Boles, Thermodynamics: An Engineering Approach. New York: McGraw-Hill, 1998.
3. M. J. Williamson, R. M. Tromp, P. M. Vereecken, R. Hull, and F. M. Ross, "Dynamic microscopy of nanoscale cluster growth at the solid-liquid interface," Nat. Mater., vol.2, no.8, pp. 532-536, Aug. 2003.
4. A. Radisic, P. M. Vereecken, J. B. Hannon, P. C. Searson, and F. M. Ross, "Quantifying electrochemical nucleation and growth of nanoscale clusters using real-time kinetic data," Nano Lett., vol.6, no.2, pp. 238-242, Feb. 2006.
5. K. Liu, C. Wu, Y. Huang, H. Peng, H. Chang, P. Chang, L. Hsu, and T. Yew, "Novel microchip for in situ TEM imaging of living organisms and bio-reactions in aqueous conditions," Lab Chip, vol.8, no.11, pp. 1915-1921, Nov. 2008.
6. N. de Jonge, D. B. Peckys, G. J. Kremers, and D. W. Piston, "Electron microscopy of whole cells in liquid with nanometer resolution," Proc. Nat. Acad. Sci., vol.106, no.7, pp. 2159-2164, Feb. 2009.
7. H. Zheng, R. K. Smith, Y. Jun, C. Kisielowski, U. Dahmen, and A. P. Alivisatos, "Observation of single colloidal platinum nanocrys-tal growth trajectories," Science, vol.324, no.5932, pp. 1309-1312, Jun. 2009.
8. H. Zheng, S. A. Claridge, A. M. Minor, A. P. Alivisatos, and U. Dahmen, "Nanocrystal diffusion in a liquid thin film observed by in situ transmission electron microscopy," Nano Lett., vol.9, no.6, pp. 2460-2465, Jun. 2009.
9. J. Creemer, S. Helveg, G. Hoveling, S. Ullmann, A. Molenbroek, P. Sarro, and H. Zandbergen, "Atomic-scale electron microscopy at ambient pressure," Ultramicroscopy, vol.108, no.9, pp. 993-998, Aug. 2008.
10. S. Christiansen, R. Singh, and U. Gosele, "Wafer direct bonding: From advanced substrate engineering to future applications in micro/nanoelectronics," Proc. IEEE, vol.94, no.12, pp. 2058-2059, Dec. 2006.
11. X. X. Zhang and J. Raskin, "Low-temperature wafer bonding: A study of void formation and influence on bonding strength," J. Microelectromech. Syst., vol.14, no.2, pp. 368-382, Apr. 2005. (Pubitemid 40679627)
12. G. Ilicali, W. Rosner, W. Weber, S. Boz, L. Dreeskornfeld, J. Hartwich, J. Kretz, J. Luyken, E. Landgraf, F. Hofmann, L. Risch, and W. Hansch, "Use of LPCVD TEOS as a direct bonding material for layer transfer: Densified vs. undensified," in Proc. IEEE Int. SOI Conf., 2004, pp. 44-45.
13. T. Suni, "Direct wafer bonding for MEMS and microelectronics," Ph.D. dissertation, Dept. Mater. Sci. Eng., Helsinki Univ. Technol., Helsinki, Finland, 2006.
14. Q. Y. Tong, G. Cha, R. Gafiteanu, and U. Gosele, "Low temperature wafer direct bonding," J. Microelectromech. Syst., vol.3, no.1, pp. 29-35, Mar. 1994.
15. T. Suni, K. Henttinen, A. Lipsanen, J. Dekker, H. Luoto, and M. Kulawski, "Wafer scale packaging of MEMS by using plasma-activated wafer bonding," J. Electrochem. Soc., vol.153, no.1, pp. G78-G82, Dec. 2006.
16. A. Doll, M. Rabold, F. Goldschmidtboing, and P. Woias, "Versatile low temperature wafer bonding and bond strength measurement by a blister test method," Microsyst. Technol., vol.12, no.5, pp. 418-429, Apr. 2006.
17. G. Kissinger and W. Kissinger, "Void-free silicon-wafer-bond strengthening in the 200-400 C range," Sens. Actuators A, Phys., vol.36, no.2, pp. 149-156, Mar. 1993.
18. M. Wiegand, M. Reiche, U. Gösele, K. Gutjahr, D. Stolze, R. Longwitz, and E. Hiller, "Wafer bonding of silicon wafers covered with various surface layers," Sens. Actuators A, Phys., vol. 86, no. 1/2, pp. 91-95, Oct. 2000.
19. S. Mack, H. Baumann, U. Gösele, H. Werner, and R. Schlögl, "Analysis of bonding-related gas enclosure in micromachined cavities sealed by silicon wafer bonding," J. Electrochem. Soc., vol.144, no.3, pp. 1106-1111, Mar. 1997.
20. Q. Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology. New York: Wiley, 1999, p. 51.
21. Q. Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology. New York: Wiley, 1999.
22. R. Pelzer, H. Kirchberger, and P. Kettner, "Wafer-to-wafer bonding techniques: From MEMS packaging to IC integration applications," in Proc. 6th Int. Conf. Electron. Packag. Technol., 2005, pp. 1-6.
23. J. Wei, "Wafer bonding techniques for microsystem packaging," J. Phys., Conf. Ser., vol.34, pp. 943-948, 2006.
24. A. Plöl and G. Kräuter, "Wafer direct bonding: Tailoring adhesion between brittle materials," Mater. Sci. Eng. R, Rep., vol. 25, no. 1/2, pp. 1-88, Mar. 1999.
25. M. Miyashita, T. Tusga, K. Makihara, and T. Ohmi, "Dependence of surface microroughness of CZ, FZ, and EPI wafers on wet chemical processing," J. Electrochem. Soc., vol.139, no.8, pp. 2133-2142, Aug. 1992.
26. Q. Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology. New York: Wiley, 1999, p. 53.
27. H. Min, Y. Joo, and O. Song, "Effects of wafer cleaning and annealing on glass/silicon wafer direct bonding," J. Electron. Packag., vol.126, no.1, pp. 120-123, Mar. 2004.
28. H. Moriceau, F. Rieutord, C. Morales, and M. Charvet, "Surface plasma treatments enabling low temperature direct bonding," Microsyst. Technol., vol.12, no.5, pp. 378-382, Apr. 2006.
29. S. N. Farrens, J. R. Dekker, J. K. Smith, and B. E. Roberds, "Chemical free room temperature wafer to wafer direct bonding," J. Electrochem. Soc., vol.142, no.11, pp. 3949-3955, Nov. 1995.
30. A. Doll, F. Goldschmidtboeing, and P. Woias, "Low temperature plasma-assisted wafer bonding and bond-interface stress characterization," in Proc. 17th IEEE Int. Conf. MEMS, 2004, pp. 665-668.
31. W. P. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, "Bonding of silicon wafers for silicon-on-insulator," J. Appl. Phys., vol.64, no.10, pp. 4943-4950, Nov. 1988.
32. J. Bagdahn, M. Petzold, M. Reiche, and K. Gutjahr, "Characterization of directly bonded silicon wafers by means of the double cantilever crack opening method," in Proc. 4th Int. Symp. Semicond. Wafer Bonding, Sci. Technol. Appl. IV, 1998, pp. 291-298.
33. L. Chen, T. Chen, and L. Sun, "Measurement method of bond strength for silicon direct wafer bonding," in Proc. IEEE Int. Conf. Inf. Acquisition, 2006, pp. 1021-1025.
34. K. T. Turner and S. M. Spearing, "Accurate characterization of wafer bond toughness with the double cantilever specimen," J. Appl. Phys., vol.103, no.1, p. 013 514, Jan. 2008.
35. M. M. Visser, S. Weichel, R. de Reus, and A. B. Hanneborg, "Strength and leak testing of plasma activated bonded interfaces," Sens. Actuators A, Phys., vol.97/98, pp. 434-440, Apr. 2002.
36. Handbook of Chemistry and Physics, 77th ed., CRC Press, Boca Raton, FL, 1996, 10-266.
37. Handbook of Optical Constants of Solids, Academic, New York, 1998, p. 774.
38. P. Schiebener, J. Straub, J. M. H. L. Sengers, and J. S. Gallagher, "Refractive index of water and steam as function of wavelength, temperature and density," J. Phys. Chem. Ref. Data, vol.19, no.3, pp. 677-717, 1990