Low temperature plasma-assisted wafer bonding and bond-interface stress characterization

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2004, Pages 665-668

  Doll, Alexander ^a   Goldschmidtboeing, Frank ^a   Woias, Peter ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; BOND STRENGTH (CHEMICAL); CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); OXIDATION; REACTIVE ION ETCHING;

CHEMICAL SURFACE ACTIVATION; ISOTROPIC STRUCTURING; SPIN DRYERS; WAFER BONDING;

SILICON WAFERS;

EID: 3042704275     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Q. -Y. Tong, U. Gösele: "Semiconductor Wafer Bonding, Science and Technology", The Electrochemical Society Series, 1999
2. W.P. Maszara, G.Goetz, A.Caviglia, J.McKitterick: "Bonding of silicon wafers for silicon-on-insulator", J. Appl. Phys., 64 (1988)
3. M.L. Williams, "The Continuum Interpretation for Fracture and Adhesion", J. Appl. Poly. Science, 13, 1969
4. Verband der Automobilindustrie e.V., "Qualitätsmanagement in der Automobilindustrie", ISSN 0943-9412, 2000
5. www.imtek.de/konstruktion