Use of LPCVD TEOS as a direct bonding material for layer transfer: Densified vs. Undensified

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 44-45

  Ilicali, G ^a,b   Rosner W ^a   Weber, W ^a,b   Boz, S ^a   Dreeskornfeld, L ^a   Hartwich, J ^a   Kretz, J ^a   Luyken, J R ^a   Landgraf, E ^a   Hofmann, F ^a   Risch, L ^a   Hansch, W ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BOND STRENGTH (CHEMICAL); BUBBLE FORMATION; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; DENSIFICATION; LAYERED MANUFACTURING; OPTIMIZATION; OXIDES; SCANNING ELECTRON MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SURFACE ROUGHNESS;

BONDING ENERGY; LAYER TRANSFER; MICROROUGHNESS; TEOS;

DISSIMILAR MATERIALS;

EID: 20144389705     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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4. T. Suni et.al., J. Electrochem. Soc. 149, 348 (2002)
5. W.Han, et.al., J. Appl. Phys. 88, 4404 (2000)