Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO

Solid-State Electronics

Volumn 54, Issue 7, 2010, Pages 732-735

  Lu, Y F ^a   Ye, Z Z ^a   Zeng, Y J ^a   Zhu, L P ^a   Huang, J Y ^a   Zhao, B H ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A. p Type ZnO; C. Ohmic contacts; E. CTLM; E. SIMS

Indexed keywords

A. P-TYPE ZNO; INTERFACE DIFFUSION; INTERFACE REACTIONS; N-DOPED; OHMIC CONTACT FORMATION; P TYPE ZNO; P-TYPE; SECONDARY IONS; SPECIFIC CONTACT RESISTIVITY;

ANNEALING; ELECTRIC CONTACTORS; PLATINUM; SECONDARY ION MASS SPECTROMETRY; ZINC; ZINC OXIDE;

OHMIC CONTACTS;

EID: 77955330703     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.03.012     Document Type: Article

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