Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers

Electrochemical and Solid-State Letters

Volumn 8, Issue 7, 2005, Pages

  Kim, Sang Ho ^a   Maeng, Jeong Tae ^a   Choi, Chel Jong ^b   Leem, Jae Hyeon ^c   Han, Myung Soo ^c   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c MOXtronix Incorporated   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ENERGY DISPERSIVE SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; PLATINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIA;

ANNEALING TEMPERATURE; CIRCULAR TRANSFER LENGTH MODEL (CTLM); HYBRID BEAM DEPOSITION SYSTEM; P-TYPE ZNO LAYERS;

OHMIC CONTACTS;

EID: 23244432451     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1922873     Document Type: Article

References (25)

1. R. F. Service, Science, 276, 895 (1997).
2. D. C. Look, B. Clafin, Ya. I. Alivov, and S. J. Park, Phys. Status Solidi C, 201, 2203 (2004).
3. X.-L. Guo, J.-H. Choi, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 2, 40, L177 (2001).
4. T.-H. Moon, M.-C. Jeong, W. Lee, and J.-M. Myoung, Appl. Surf. Sci., 240, 280 (2005).
5. A. Tiwari, C. Jin, D. Kumar, and J. Narayan, Appl. Phys. Lett., 83, 1773 (2003).
6. K. Tonooka, H. Bando, and Y. Aiura, Thin Solid Films, 445, 327 (2003).
7. K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, Appl. Phys. Lett.. 85, 1169 (2004).
8. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, J. Vac. Sci. Technol. B, 22, 932 (2004).
9. H.-K. Kim, S.-H. Han, W. K. Choi, and T.-Y. Seong, Appl. Phys. Lett., 77, 1647 (2000).
10. H.-K. Kim, T.-Y. Seong, K.-K. Kim, S.-J. Park, Y. S. Yoon, and I. Adesida, Jpn. J. Appl. Phys., Part 1, 43, 976 (2004).
11. H.-K. Kim, K.-K. Kim, S.-J. Park, T.-Y. Seong, and Y. S. Yoon, Jpn. J. Appl. Phys., Part 2, 41, L546 (2002).
12. H.-K. Kim, I. Adesida, K.-K. Kim, S.-J. Park, and T.-Y. Seong, J. Electrochem. Soc., 151, G223 (2004).
13. K. Ip, B. P. Gila, A. H. Onstine, E. S. Lambers, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, S. Kim, J. R. LaRoche, and F. Ren, Appl. Phys. Lett., 84, 5133 (2004).
14. S.-H. Kim, K.-K. Kim, S.-J. Park, and T.-Y. Seong, J. Electrochem. Soc., 152, G169 (2005).
15. G. Xiong, J. Wilkinson, B. Mischuck, S. Tuzemen, K. B. Ucer, and R. T. Williams, Appl. Phys. Lett. 80, 1195 (2002).
16. Y. R. Ryu, T. S. Lee, J. H. Leem, and H. W. White, Appl. Phys. Lett., 83, 4032 (2003).
17. Y. R. Ryu, T. S. Lee, and H. W. White, J. Cryst. Growth, 261, 502 (2004).
18. G. S. Marlow and M. B. Das, Solid-State Electron., 25, 91 (1982).
19. C.-C. Lin, C.-S. Hsiao, S.-Y. Chen, and S.-Y. Cheng, J. Electrochem. Soc., 151, G285 (2004).
20. D. B. Williams and C. B. Carter, Transmission Electron Microscopy, p. 353, Plenum Press, New York, (1996).
21. R. T. Tung, Phys. Rev. B, 45, 13509 (1992).
22. S. K. Lee, C. M. Zettering, M. Ostling, I. Aberg, M. H. Magnusson, K. Deppert, L. E. Wernersson, L. Samuelson, and A. Litwin, Solid-State Electron., 46, 1433 (2002).
23. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, p. 39, Clarendon, Oxford (1988).
24. J. I. Sohn, J.-O. Song, D.-S. Leem, S. Lee, and T.-Y. Seong, Electrochem. Solid-State Lett., 7, G179 (2004).
25. J. I. Sohn, J.-O. Song, D.-S. Leem, S. Lee, and T.-Y. Seong, Phys. Status Solidi C 1, 2524 (2004).