Ohmic contact to phosphorous-doped ZnO using PtNiAu for p-n homojunction diode

Journal of the Electrochemical Society

Volumn 153, Issue 12, 2006, Pages

  Lee, Ji Myon ^a   Kim, K K ^b   Tampo, H ^b   Yamada, A ^b   Niki, S ^b  

^a Sunchon National University   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIODES; DOPING (ADDITIVES); ELECTRIC RESISTANCE; OHMIC CONTACTS; PHOSPHORUS; X RAY DIFFRACTION;

BANDGAP ENERGY; CONTACT RESISTANCE; MULTILAYER CONTACT;

ZINC OXIDE;

EID: 33750795317     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2357710     Document Type: Article

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