Rapid thermal annealing induced changes on the contact of Ni/Au to N-doped ZnO

Applied Surface Science

Volumn 254, Issue 21, 2008, Pages 6962-6966

  Shan, Z P ^a   Gu, S L ^a   Zhu, S M ^a   Liu, W ^a   Tang, K ^a   Chen, H ^a   Liu, J G ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Doping; Metal organic chemical vapor deposition; Semiconducting II VI materials; ZnO

Indexed keywords

CONTACT RESISTANCE; DOPING (ADDITIVES); ELECTRIC CURRENTS; GOLD COMPOUNDS; II-VI SEMICONDUCTORS; INDUSTRIAL CHEMICALS; INTERFACE STATES; MAGNETIC SEMICONDUCTORS; METAL ANALYSIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; NICKEL COMPOUNDS; ORGANIC CHEMICALS; ORGANOMETALLICS; RAPID THERMAL ANNEALING; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CIRCULAR TRANSMISSION LINE; ELECTRIC CHARACTERISTICS; HALL EFFECT MEASUREMENT; METAL ORGANIC; NITROGEN ENVIRONMENT; RAPID THERMAL ANNEALING PROCESS; SEMICONDUCTING II-VI MATERIALS; SPECIFIC CONTACT RESISTANCES;

NITROGEN COMPOUNDS;

EID: 49549116409     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.118     Document Type: Article

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