Low resistance nonalloyed Ni/Au Ohmic contacts to p-GaN irradiated by KrF excimer laser

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Oh, Min Suk ^a   Hwang, Dae Kue ^a   Lim, Jae Hong ^a   Kang, Chang Goo ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; EXCIMER LASERS; GALLIUM NITRIDE; KRYPTON; LASER BEAM EFFECTS; NANOSTRUCTURED MATERIALS; NICKEL ALLOYS;

CONTACT RESISTANCE; HOLE CONCENTRATION; KRF EXCIMER LASER; NONALLOYED NI/AU OHMIC CONTACTS;

OHMIC CONTACTS;

EID: 33746594937     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2236656     Document Type: Article

References (25)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys., Part 2 34, L797 (1995).
2. M. A. Khan, A. R. Bhattarai, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. 63, 1214 (1993).
3. D. L. Hibbard, S. P. Jung, C. Wang, D. Ullery, Y. S. Zhao, H. P. Lee, W. So, and H. Liu, Appl. Phys. Lett. 83, 311 (2003).
4. J. S. Jang, S. J. Park, and T. Y. Seong, J. Appl. Phys. 88, 5490 (2000).
5. K. Hattori and Y. Izumi, J. Appl. Phys. 53, 6906 (1982).
6. V. M. Bermudez, J. Appl. Phys. 80, 1190 (1996).
7. K. Prabhakaran, T. G. Andersson, and K. Nozawa, Appl. Phys. Lett. 69, 3212 (1996).
8. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. Mokoc, Appl. Phys. Lett. 64, 1003 (1994).
9. Y. J. Lin and C. T. Lee, Appl. Phys. Lett. 77, 3986 (2000).
10. Z. Fan, S. N. Mohammad, W. Kim, O. Aktas, A. E. Botchkarev, and H. Mokoc, Appl. Phys. Lett. 68, 1672 (1996).
11. A. T. Ping, Q. Chen, J. W. Yang, M. Asif Khan, and I. Adesida, J. Electron. Mater. 27, 261 (1998).
12. S. W. Kim, J. M. Lee, C. Huh, N. M. Park, H. S. Kim, I. H. Lee, and S. J. Park, Appl. Phys. Lett. 76, 3079 (2000).
13. H. S. Kim, N. M. Park, J. S. Jang, S. J. Park, and H. S. Hwang, Electrochem. Solid-State Lett. 4, 104 (2001).
14. J. S. Jang, S. J. Park, and T.-Y. Seong, J. Vac. Sci. Technol. B 17, 2667 (1999).
15. D. J. Kim, H. M. Kim, M. G. Han, Y. T. Moon, S. Lee, and S. J. Park, Phys. Status Solidi B 228, 375 (2001).
16. H. W. Jang, T. Sands, and J. L. Lee, J. Appl. Phys. 94, 3529 (2003).
17. G. S. Marlow and M. B. Das, Solid-State Electron. 25, 91 (1982).
18. T. K. Zywietz, J. Neugebauer, and M. Scheffler, Appl. Phys. Lett. 74, 1695 (1999).
19. K. Kuriyama, T. Tsunoda, N. Hayashi, and Y. Takahashi, Phys. Rev. B 148, 432 (1999).
20. C. D. Tsai and C. T. Lee, J. Appl. Phys. 87, 4230 (2000).
21. V. M. Bermudez, D. D. Koleske, and A. E. Wickenden, Appl. Surf. Sci. 126, 69 (1998).
22. J. Chastain and R. C. King, Jr., Handbook of X-Ray Photoelectron Spectroscopy (Physical Electronics, Eden prairie, MN, 1995).
23. N. Holonyak, Jr., Physics of Semiconductor Devices, 2nd ed. (Prentice-Hall, Englewood Cliffs, NJ, 1990).
24. J.-O. Song, D.-S. Leem, and T.-Y. Seong, Appl. Phys. Lett. 83, 3513 (2003).
25. M. Shur, Physics of Semiconductor Devices (Prentice-Hall, Englewood Cliffs, NJ, 1990).