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Volumn 49, Issue 6 PART 1, 2010, Pages 0610011-0610014

High-mobility AlGaN/GaN two-dimensional electron gas heterostructure grown on (111) single crystal diamond substrate

(8) Dussaigne, Amélie a Gonschorek, Marcus a Malinverni, Marco a Py, Marcel A a Martin, Denis a Mouti, Anas a Stadelmann, Pierre a Grandjean, Nicolas a

a EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALN; DIAMOND SUBSTRATES; FREE OF CRACKS; HALL EFFECT MEASUREMENT; HETEROSTRUCTURES; HIGH MOBILITY; HIGH POWER ELECTRONICS; HIGH-POWER; RMS ROUGHNESS; ROOM TEMPERATURE MOBILITY; SAMPLE SURFACE; SCAN AREA; SHEET CARRIER DENSITIES; SINGLE CRYSTAL DIAMOND; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ATOMIC FORCE MICROSCOPY; DIAMONDS; ELECTRON GAS; GALLIUM; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MORPHOLOGY; POWER ELECTRONICS; SINGLE CRYSTALS; SUBSTRATES; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

SURFACE MORPHOLOGY;

EID: 77955312405 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.061001 Document Type: Article

Times cited : (21)

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