GaN on Si(111): From growth optimization to optical properties of quantum well structures

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 101-105

  Semond, F ^a   Damilano, B ^a   Vezian S ^a   Grandjean, N ^a   Leroux, M ^a   Massies, J ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242846     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<101::AID-PSSB101>3.0.CO;2-R     Document Type: Article

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