MOVPE growth of single-crystal hexagonal AlN on cubic diamond

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2825-2830

  Taniyasu, Yoshitaka ^a   Kasu, Makoto ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

A1. Interfaces; A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Diamond; B1. Nitrides

Indexed keywords

A1. INTERFACES; A1. X-RAY DIFFRACTION; A3. METALORGANIC VAPOR-PHASE EPITAXY; B1. DIAMOND; B1. NITRIDES;

ALUMINA; ALUMINUM; AMORPHOUS CARBON; CRYSTAL GROWTH; CRYSTALS; DIAMONDS; DIFFRACTION; GROWTH TEMPERATURE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHASE INTERFACES; SUBSTRATES; SULFUR COMPOUNDS; VAPORS; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 65749100400     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.021     Document Type: Article

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