Comparison of GaN HEMTs on diamond and SiC substrates

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 948-950

  Felbinger, Jonathan G ^a   Chandra, M V S ^a   Sun, Yunju ^a   Eastman, Lester F ^a   Wasserbauer, John ^b   Faili, Firooz ^b   Babic, Dubravko ^b   Francis, Daniel ^b   Ejeckam, Felix ^b  

^a Cornell University   (United States)

^b Group4 Labs Inc   (United States)

Author keywords

GaN on diamond; High electron mobility transistor (HEMT); Microwave power; Thermal effects in AlGaN; X band

Indexed keywords

SEMICONDUCTING DIAMONDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS;

MICROWAVE POWER; POWER DENSITY; SILCION CARBIDE SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36148978223     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.908490     Document Type: Article

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