Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy

Journal of Crystal Growth

Volumn 312, Issue 3, 2010, Pages 368-372

  Imura, Masataka ^a   Nakajima, Kiyomi ^a   Liao, Meiyong ^a   Koide, Yasuo ^a   Amano, Hiroshi ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

A1. Defects; A3. Metal organic vapor phase epitaxy; B1. Diamond; B1. Nitride

Indexed keywords

A3. METAL-ORGANIC VAPOR PHASE EPITAXY; ALN; ALN LAYERS; B1. DIAMOND; B1. NITRIDE; CRYSTALLINE PARTICLES; DIAMOND SUBSTRATES; DIAMOND SURFACES; GROWTH MECHANISMS; HIGH GROWTH TEMPERATURES; INITIAL STAGES; METAL-ORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURAL ANALYSIS; TWO-DOMAIN STRUCTURES; WURTZITES; X RAY DIFFRACTOMETRY;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIAMONDS; METALS; NITRIDES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 72549095551     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.017     Document Type: Article

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