Enhanced durability of antisticking layers by recoating a silica surface with fluorinated alkylsilane derivatives by chemical vapor surface modification

Japanese Journal of Applied Physics

Volumn 49, Issue 6 PART 2, 2010, Pages

  Kohno, Akihiro ^a,b   Sakai, Nobuji ^c   Matsui, Shinji ^b,d   Nakagawa, Masaru ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOYO GOSEI CO LTD   (Japan)

^d UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED MONOLAYERS; ALKYLSILANES; ANTISTICKING LAYERS; CHEMICAL VAPOR; LENS SURFACE; LIGHT EXPOSURE; RADICAL POLYMERIZATION; RECOATING; REPEATED CYCLE; SILICA SURFACE; SURFACE IMPURITIES; SURFACE MODIFICATION; TRICHLOROSILANES; TRIMETHOXYSILANE; UV CURABLE; UV NANOIMPRINT LITHOGRAPHY; VACUUM ULTRAVIOLET LIGHT;

ANGLE MEASUREMENT; ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; CONTACT ANGLE; CURING; DURABILITY; ELECTRON ENERGY LEVELS; LENSES; MONOLAYERS; NANOIMPRINT LITHOGRAPHY; OPTICAL INSTRUMENTS; RESINS; SILICA; VAPORS;

SURFACE CLEANING;

EID: 77955310986     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.06GL12     Document Type: Article

References (22)

1. J. Haisma, M. Verheijen, K. Heuvel, and J. Berg: J. Vac. Sci. Technol. B 14 (1996) 4124.
2. H. Hiroshima, S. Inoue, N. Kasahara, J. Taniguchi, I. Miyamoto, and M. Komuro: Jpn. J. Appl. Phys. 41 (2002) 4173.
3. J. Taniguchi, T. Kawasaki, Y. Tokano, Y. Kogo, I. Miyamoto, M. Komuro, H. Hiroshima, N. Sakai, and K. Tada: Jpn. J. Appl. Phys. 41 (2002) 4194.
4. Y. Kurashima, Y. Yokota, I. Miyamoto, and T. Itani: J. Vac. Sci. Technol. B 25 (2007) 115.
5. N. Sakai, J. Taniguchi, K. Kawaguchi, M. Ohtaguchi, and T. Hirasawa: J. Photopolym. Sci. Technol. 18 (2005) 531.
6. J. Tallal, M. Gordon, K. Berton, A. L. Charley, and D. Peyrade: Microelectron. Eng. 83 (2006) 851.
7. Y. Tada, H. Yoshida, and A. Miyauchi: J. Photopolym. Sci. Technol. 20 (2007) 545.
8. Y. Ishii and J. Taniguchi: Microelectron. Eng. 84 (2007) 912.
9. S. Garidel, M. Zelsmann, N. Chaix, P. Voisin, J. Boussey, A. Beaurain, and B. Pelissier: J. Vac. Sci. Technol. B 25 (2007) 2430.
10. M. J. Lee, N. Y. Lee, J. R. Lim, J. B. Kim, M. Kim, H. K. Baik, and Y. S. Kim: Adv. Mater. 18 (2006) 3115.
11. F. A. Houle, E. Guyer, D. C. Miller, and R. Dauskardt: J. Vac. Sci. Technol. B 25 (2007) 1179.
12. E.-J. Jang, Y.-B. Park, H.-J. Lee, D.-G. Choi, J.-H. Jeong, E.-S. Lee, and S. Hyun: Int. J. Adhes. Adhes. 29 (2009) 662.
13. A. Pozzato, S. D. Zilio, G. Fois, D. Vendramin, G. Mistura, M. Belotti, Y. Chen, and M. Natali: Microelectron. Eng. 83 (2006) 884.
14. D. G. Choi, D. I. Lee, K. D. Kim, J. H. Jeong, J. H. Choi, and E. S. Lee: J. Nanosci. Nanotechnol. 9 (2009) 769.
15. G. Y. Jung, Z. Li, W. Wu, Y. Chen, D. L. Olynick, S. Y. Wang, W. M. Tong, and R. S. Williams: Langmuir 21 (2005) 1158.
16. J. Taniguchi, Y. Kamiya, T. Ohsaki, and N. Sakai: J. Photopolym. Sci. Technol. 22 (2009) 175.
17. E. P. Chan and A. J. Crosby: J. Vac. Sci. Technol. B 24 (2006) 2716.
18. H. Tada and H. Nagayama: Langmuir 10 (1994) 1472.
19. A. Hozumi, K. Ushiyama, H. Sugimura, and O. Takai: Langmuir 15 (1999) 7600.
20. A. B. D. Cassie and S. Baxter: Trans. Faraday Soc. 40 (1944) 546.
21. T. Bailey, B. Smith, B. J. Choi, M. Colburn, M. Meissl, S. V. Sreenivasan, J. G. Ekerdt, and C. G. Willson: J. Vac. Sci. Technol. B 19 (2001) 2806.
22. H. Sugimura, K. Ushiyama, A. Hozumi, and O. Takai: Langmuir 16 (2000) 885.