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Volumn 87, Issue 9, 2010, Pages 1728-1734

The correlation of the electrical properties with electron irradiation and constant voltage stress for MIS devices based on high-k double layer (HfTiSiO:N and HfTiO:N) dielectrics

(4) Mikhelashvili, V a Thangadurai, P a Kaplan, W D a Eisenstein, G a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

Electrical properties; High k dielectrics; Metal insulator semiconductor (MIS) devices

Indexed keywords

APPLIED VOLTAGES; CONSTANT VOLTAGE STRESS; CURRENT FLOW MECHANISMS; CURRENT FLOWS; CURRENT MECHANISMS; DOUBLE LAYERS; E-BEAM IRRADIATION; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; HIGH-K DIELECTRIC; IRRADIATION DOSE; J-V CHARACTERISTICS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL-INSULATOR-SEMICONDUCTOR DEVICES; POST-BREAKDOWN CURRENT; PREBREAKDOWN; SCHOTTKY DIODES; ULTRA-THIN; VOLTAGE STRESS;

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRON IRRADIATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77955228090 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2009.09.010 Document Type: Conference Paper

Times cited : (9)

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