Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress

Microelectronics Reliability

Volumn 45, Issue 9-11, 2005, Pages 1365-1369

  Miranda, E ^a   Molina, J ^b   Kim, Y ^b   Iwai, H ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIODES; ELECTRON TUNNELING; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES; STRESS ANALYSIS;

DIODE-LIKE CONDUCTION; ELECTRICAL STRESS; OXIDE FILMS; PARALLEL RESISTANCES;

DIELECTRIC MATERIALS;

EID: 24144463962     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.07.022     Document Type: Conference Paper

References (13)

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