Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 734-736

  Zous, Nian Kai ^a   Wang, Tahui ^a   Yeh, Chih Chich ^a   Tsai, C W ^a   Huang, Chimoon ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CORRELATION METHODS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; HOLE TRAPS; LEAKAGE CURRENTS; STRESS ANALYSIS; SUBSTRATES;

FOWLER/NORDHEIM (FN) STRESS; HOT ELECTRON INJECTIONS; POSITIVE ION CHARGES; STRESS INDUCED LEAKAGE CURRENTS (SILC); TUNNEL OXIDES;

MOSFET DEVICES;

EID: 0032620137     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124497     Document Type: Article

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