Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer

Applied Physics Letters

Volumn 91, Issue 7, 2007, Pages

  Loh, T H ^a   Nguyen, H S ^a   Murthy, R ^a   Yu, M B ^a   Loh, W Y ^a   Lo, G Q ^a   Balasubramanian, N ^a   Kwong, D L ^a   Wang, J ^b   Lee, S J ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; PHOTODETECTORS; PHOTODIODES; THERMAL EFFECTS;

EPITAXIAL GERMANIUM; LEAKAGE CURRENT DENSITIES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 34548026782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769750     Document Type: Article

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