Germanium-on-SOI infrared detectors for integrated photonic applications

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1489-1502

  Koester, Steven J ^a,b   Schaub, Jeremy D ^a,c   Dehlinger, Gabriel ^b,d   Chu, Jack O ^b  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM AUSTIN RESEARCH LABORATORY   (United States)

^d INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Germanium; Optoelectronic devices; Photodetectors; Silicon on insulator (SOI) technology

Indexed keywords

BANDWIDTH; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; OPTICAL INTERCONNECTS; OPTOELECTRONIC DEVICES; QUANTUM EFFICIENCY; SEMICONDUCTING GERMANIUM; SILICON ALLOYS; SILICON ON INSULATOR TECHNOLOGY;

BIAS VOLTAGE; DARK CURRENT; INTEGRATED PHOTONIC APPLICATIONS; WAVELENGTHS;

INFRARED DETECTORS;

EID: 33749063712     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.883160     Document Type: Article

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