Waveguide integrated Ge p-i-n photodetectors on a silicon-on-insulator platform

2006 Optics Valley of China International Symposium on Optoelectronics, OVC EXPO

Volumn , Issue , 2006, Pages 1-4

  Liu, J F ^a   Ahn, D ^a   Hong, C Y ^a   Pan, D ^a   Jongthammanurak, S ^a   Beals, M ^a   Kimerling, L C ^a   Michel, J ^a   Pomerene, A T ^b   Carothers, D ^b   Hill, C ^b   Jaso, M ^b   Tu, K Y ^c   Chen, Y K ^c   Patel, S ^c   Rasras, M ^c   Gill, D M ^c   White, A E ^c  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b BAE SYSTEMS   (United States)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXHIBITIONS; GERMANIUM; LANDFORMS; OPTICS; OPTOELECTRONIC DEVICES; PHOTONICS; SILICON COMPOUNDS;

(HI-BI) WAVEGUIDE; GE P I N PHOTODETECTORS; HIGH INDEX CONTRAST (HIC); INTERNATIONAL SYMPOSIUM; SILICON ON INSULATOR (SOI);

PHOTODETECTORS;

EID: 34248638811     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/OVCISO.2006.302697     Document Type: Conference Paper

References (8)

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8. J. F. Liu, D. Pan, S. Jongthammanurak, K. Wada, L. C. Kimerling and J. Michel, submitted to Optics Express