Ge-SixGe1-x coreShell nanowire tunneling field-effect transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1883-1888

  Nah, Junghyo ^a   Liu, En Shao ^a   Varahramyan, Kamran M ^a   Tutuc, Emanuel ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Coreshell; nanowire (NW); silicongermanium; tunneling field effect transistor (TFET)

Indexed keywords

AMBIPOLAR BEHAVIOR; BAND TO BAND TUNNELING; CARRIER INJECTION MECHANISM; CHANNEL LENGTH; CORE-SHELL NANOWIRES; DEVICE CHARACTERISTICS; DEVICE STRUCTURES; DRAIN DOPING; EXPERIMENTAL INVESTIGATIONS; LOW ENERGY ION IMPLANTATION; ON STATE CURRENT; SILICON GERMANIUM; SUBTHRESHOLD SWING; TEMPERATURE DEPENDENCE; TUNNELING FIELD-EFFECT TRANSISTORS;

GERMANIUM; ION IMPLANTATION; NANOWIRES; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 77955172915     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051249     Document Type: Article

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