Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 2, 2010, Pages 491-495

  Nah, Junghyo ^a   Liu, En Shao ^a   Varahramyan, Kamran M ^a   Shahrjerdi, Davood ^b   Banerjee, Sanjay K ^a   Tutuc, Emanuel ^a  

^a The University of Texas at Austin   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Core shell; Field effect transistor (FET); Nanowire (NW); Silicon germanium

Indexed keywords

BORON IMPLANTATION; CARRIER INJECTION; CORE-SHELL; CORE-SHELL NANOWIRES; DEVICE PARAMETERS; EFFECTIVE CHANNEL LENGTH; FIELD-EFFECT TRANSISTOR (FET); INTRINSIC CHANNEL RESISTANCE; LOW ENERGIES; ON/OFF CURRENT RATIO; SCALING PROPERTIES; SILICON GERMANIUM; SWITCHING SPEED;

BORON; CARRIER MOBILITY; CONTACT RESISTANCE; D REGION; GERMANIUM; MESFET DEVICES; NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 76349111563     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2037406     Document Type: Article

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