Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator

Applied Physics Letters

Volumn 94, Issue 26, 2009, Pages

  Kazazis, D ^a   Jannaty, P ^a   Zaslavsky, A ^a   Le Royer, C ^b   Tabone, C ^b   Clavelier, L ^b   Cristoloveanu, S ^c  

^a Brown University   (United States)

^b CEA LETI   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR BEHAVIOR; COMPATIBLE PROCESS; EFFECTIVE GATE LENGTH; ELECTRICAL CHARACTERIZATION; EPITAXIALLY GROWN; GATE STACKS; GERMANIUM-ON-INSULATOR; ION IMPLANTED; LOW TEMPERATURES; ON CURRENTS; ON/OFF CURRENT RATIO; SILICON ON INSULATOR; TUNNELING FIELD-EFFECT TRANSISTORS; ULTRALARGE SCALE INTEGRATION;

FABRICATION; GERMANIUM; HAFNIUM COMPOUNDS; MOSFET DEVICES; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 67649948778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3168646     Document Type: Article

References (21)

1. The latest publicly released version of the ITRS roadmap is available on the http://public.itrs.net website.
2. G. K. Celler and S. Christoloveanu, J. Appl. Phys. 0021-8979 93, 4955 (2003). 10.1063/1.1558223
3. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and A. Metz, IEEE Electron Device Lett. 0741-3106 25, 408 (2004). 10.1109/LED.2004.828570
4. M. T. Bohr, R. S. Chau, T. Ghani, and K. Mistry, IEEE Spectrum 0018-9235 44, 29 (2007). 10.1109/MSPEC.2007.4337663
5. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 446-447.
6. W. Schockley and W. W. Hooper, Proceedings of the WESCON, 1964 (unpublished), p. 12.1; Since this reference is generally unavailable, it can be consulted at http://www.ece.sunysb.edu/~serge/Shockley-Hooper-1964.pdf.
7. P. -F. Wang, K. Hilsenbeck, T. Nirschl, M. Oswald, C. Stepper, M. Weis, D. Schmitt-Landsiedel, and W. Hansch, Solid-State Electron. 0038-1101 48, 2281 (2004). 10.1016/j.sse.2004.04.006
8. Q. Zhang, W. Zhao, and A. Seabaugh, IEEE Electron Device Lett. 0741-3106 27, 297 (2006). 10.1109/LED.2006.871855
9. W. Y. Choi, B. -G. Park, J. D. Lee, and T. -J. King Liu, IEEE Electron Device Lett. 0741-3106 28, 743 (2007). 10.1109/LED.2007.901273
10. F. Mayer, C. Le Royer, J. F. Damlencourt, K. Romanjek, F. Andrieu, C. Tabone, B. Previtali, and S. Deleonibus, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 163.
11. T. Uemura and T. Baba, Jpn. J. Appl. Phys., Part 2 0021-4922 33, L207 (1994). 10.1143/JJAP.33.L207
12. W. M. Reddick and G. A. J. Amaratunga, Appl. Phys. Lett. 0003-6951 67, 494 (1995). 10.1063/1.114547
13. K. K. Bhuwalka, S. Sedlmaier, A. K. Ludsteck, A. Tolksdorf, J. Schulze, and I. Eisele, IEEE Trans. Electron Devices 0018-9383 51, 279 (2004). 10.1109/TED.2003.821575
14. J. Koga and A. Toriumi, IEEE Electron Device Lett. 0741-3106 20, 529 (1999). 10.1109/55.791932
15. C. Aydin, A. Zaslavsky, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, and S. Deleonibus, Appl. Phys. Lett. 0003-6951 84, 1780 (2004). 10.1063/1.1668321
16. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 15-16 and 516-531, and references therein.
17. H. Shang, K. -L. Lee, P. Kozlowski, C. D'Emic, I. Babich, E. Sikorski, M. Ieong, H. -S. P. Wong, K. Guarini, and W. Haensch, IEEE Electron Device Lett. 0741-3106 25, 135 (2004). 10.1109/LED.2003.823060
18. C. Le Royer, B. Vincent, L. Clavelier, J. -F. Damlencourt, C. Tabone, P. Batude, D. Blachier, R. Truche, Y. Campidelli, Q. T. Nguyen, S. Cristoloveanu, S. Soliveres, G. Le Carval, F. Boulanger, T. Billon, D. Bensahel, and S. Deleonibus, IEEE Electron Device Lett. 0741-3106 29, 635 (2008). 10.1109/LED.2008.923539
19. S. W. Bedell, A. Majumdar, J. A. Ott, J. Arnold, K. Fogel, S. J. Koester, and D. K. Sadana, IEEE Electron Device Lett. 0741-3106 29, 811 (2008). 10.1109/LED.2008.2000713
20. J. D. Jackson, Classical Electrodynamics, 3rd ed. (Wiley, New York, 1999), pp. 75-79.
21. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. 0003-6951 89, 252110 (2006). 10.1063/1.2410241